IPW65R125C7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPW65R125C7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 101 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 15 nS
Cossⓘ - Capacitancia de salida: 26 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de IPW65R125C7 MOSFET
- Selecciónⓘ de transistores por parámetros
IPW65R125C7 datasheet
..1. Size:1961K infineon
ipw65r125c7.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R125C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R125C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion
..2. Size:242K inchange semiconductor
ipw65r125c7.pdf
isc N-Channel MOSFET Transistor IPW65R125C7 IIPW65R125C7 FEATURES Static drain-source on-resistance RDS(on) 125m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS
7.1. Size:2212K infineon
ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
7.2. Size:1947K infineon
ipw65r190c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R190C7 Data Sheet Rev. 2.1 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R190C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion
7.3. Size:2173K infineon
ipb65r150cfda ipp65r150cfda ipw65r150cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R150CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R150CFDA, IPB65R150CFDA IPP65R150CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
7.4. Size:2189K infineon
ipw65r150cfda ipb65r150cfda ipp65r150cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R150CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R150CFDA, IPB65R150CFDA IPP65R150CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
7.5. Size:2192K infineon
ipw65r190cfda ipb65r190cfda ipp65r190cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R190CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R190CFDA, IPB65R190CFDA IPP65R190CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
7.6. Size:3853K infineon
ipw65r110cfd ipb65r110cfd ipp65r110cfd ipa65r110cfd ipi65r110cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R110CFD Data Sheet Rev. 2.6 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage pow
7.7. Size:3773K infineon
ipa65r150cfd ipb65r150cfd ipi65r150cfd ipp65r150cfd ipw65r150cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R150CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R150CFD , IPB65R150CFD , IPP65R150CFD IPA65R150CFD , IPI65R150CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
7.8. Size:2175K infineon
ipb65r190cfda ipp65r190cfda ipw65r190cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R190CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R190CFDA, IPB65R190CFDA IPP65R190CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
7.9. Size:3818K infineon
ipw65r150cfd ipb65r150cfd ipp65r150cfd ipa65r150cfd ipi65r150cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R150CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R150CFD , IPB65R150CFD , IPP65R150CFD IPA65R150CFD , IPI65R150CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
7.10. Size:3828K infineon
ipa65r110cfd ipb65r110cfd ipi65r110cfd ipp65r110cfd ipw65r110cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R110CFD Data Sheet Rev. 2.6 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage pow
7.11. Size:6482K infineon
ipa65r190cfd ipb65r190cfd ipi65r190cfd ipp65r190cfd ipw65r190cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6/CFD 650V 650V CoolMOS C6 CFD Power Transistor IPx65R190CFD Data Sheet Data Sheet Rev. 2.2 Final Industrial & Multimarket IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD 650V CoolMOS C6 CFD Power Transistor TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology fo
7.12. Size:3820K infineon
ipw65r190cfd ipb65r150cfd ipp65r150cfd ipa65r150cfd ipi65r150cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R190CFD Data Sheet Rev. 2.7 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
7.13. Size:2288K infineon
ipb65r110cfda ipp65r110cfda ipw65r110cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R110CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R110CFDA, IPB65R110CFDA IPP65R110CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
7.14. Size:2324K infineon
ipw65r110cfda ipb65r110cfda ipp65r110cfda.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R110CFDA Data Sheet Rev. 2.0 Final Automotive 650V CoolMOS CFDA Power Transistor IPW65R110CFDA, IPB65R110CFDA IPP65R110CFDA TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the sup
7.15. Size:2211K infineon
ipa65r190e6 ipb65r190e6 ipi65r190e6 ipp65r190e6 ipw65r190e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
7.16. Size:242K inchange semiconductor
ipw65r190c7.pdf
isc N-Channel MOSFET Transistor IPW65R190C7 IIPW65R190C7 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS
7.17. Size:242K inchange semiconductor
ipw65r190cfd.pdf
isc N-Channel MOSFET Transistor IPW65R190CFD IIPW65R190CFD FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DS
7.18. Size:242K inchange semiconductor
ipw65r190e6.pdf
isc N-Channel MOSFET Transistor IPW65R190E6 IIPW65R190E6 FEATURES Static drain-source on-resistance RDS(on) 190m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS
7.19. Size:241K inchange semiconductor
ipw65r150cfd.pdf
isc N-Channel MOSFET Transistor IPW65R150CFD IIPW65R150CFD FEATURES Static drain-source on-resistance RDS(on) 150m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DS
7.20. Size:242K inchange semiconductor
ipw65r110cfd.pdf
isc N-Channel MOSFET Transistor IPW65R110CFD IIPW65R110CFD FEATURES Static drain-source on-resistance RDS(on) 110m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for resonant Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
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