Справочник MOSFET. IPW65R125C7

 

IPW65R125C7 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPW65R125C7
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 101 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 26 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для IPW65R125C7

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPW65R125C7 Datasheet (PDF)

 ..1. Size:1961K  infineon
 ipw65r125c7.pdf pdf_icon

IPW65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R125C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R125C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

 ..2. Size:242K  inchange semiconductor
 ipw65r125c7.pdf pdf_icon

IPW65R125C7

isc N-Channel MOSFET Transistor IPW65R125C7IIPW65R125C7FEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

 7.1. Size:2212K  infineon
 ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf pdf_icon

IPW65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R190C6 Data SheetRev. 2.0, 2011-05-09Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6IPI65R190C6, IPP65R190C6IPW65R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 7.2. Size:1947K  infineon
 ipw65r190c7.pdf pdf_icon

IPW65R125C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R190C7Data SheetRev. 2.1FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R190C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPW65R310CFD , IPW65R190E6 , IPW65R190CFDA , IPW65R190CFD , IPW65R190C7 , IPW65R190C6 , IPW65R150CFDA , IPW65R150CFD , 50N06 , IPW65R110CFDA , IPW65R110CFD , IPW65R099C6 , IPW65R095C7 , IPW65R080CFDA , IPW65R065C7 , IPW65R048CFDA , IPW65R045C7 .

History: CEM2187 | IRF713

 

 
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