IPW65R095C7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPW65R095C7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 128 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 24 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 33 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm

Encapsulados: TO-247

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IPW65R095C7 datasheet

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IPW65R095C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPW65R095C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPW65R095C7 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

 ..2. Size:242K  inchange semiconductor
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IPW65R095C7

isc N-Channel MOSFET Transistor IPW65R095C7 IIPW65R095C7 FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

 6.1. Size:3785K  infineon
ipa65r099c6 ipb65r099c6 ipi65r099c6 ipp65r099c6 ipw65r099c6.pdf pdf_icon

IPW65R095C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs

 6.2. Size:3828K  infineon
ipw65r099c6 ipb65r099c6 ipp65r099c6 ipa65r099c6 ipi65r099c6.pdf pdf_icon

IPW65R095C7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPx65R099C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPW65R099C6, IPB65R099C6, IPP65R099C6 IPA65R099C6, IPI65R099C6 TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs

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