IPW65R095C7 Todos los transistores

 

IPW65R095C7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPW65R095C7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 128 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 33 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
   Paquete / Cubierta: TO-247
 

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IPW65R095C7 Datasheet (PDF)

 ..1. Size:1925K  infineon
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IPW65R095C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R095C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R095C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

 ..2. Size:242K  inchange semiconductor
 ipw65r095c7.pdf pdf_icon

IPW65R095C7

isc N-Channel MOSFET Transistor IPW65R095C7IIPW65R095C7FEATURESStatic drain-source on-resistance:RDS(on)95mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

 6.1. Size:3785K  infineon
 ipa65r099c6 ipb65r099c6 ipi65r099c6 ipp65r099c6 ipw65r099c6.pdf pdf_icon

IPW65R095C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPx65R099C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R099C6, IPB65R099C6, IPP65R099C6IPA65R099C6, IPI65R099C6TO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs

 6.2. Size:3828K  infineon
 ipw65r099c6 ipb65r099c6 ipp65r099c6 ipa65r099c6 ipi65r099c6.pdf pdf_icon

IPW65R095C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPx65R099C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R099C6, IPB65R099C6, IPP65R099C6IPA65R099C6, IPI65R099C6TO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs

MOSTRAR MÁS

Otros transistores... IPW65R190C7 , IPW65R190C6 , IPW65R150CFDA , IPW65R150CFD , IPW65R125C7 , IPW65R110CFDA , IPW65R110CFD , IPW65R099C6 , IRF1404 , IPW65R080CFDA , IPW65R065C7 , IPW65R048CFDA , IPW65R045C7 , IPW65R041CFD , IPW65R037C6 , IPW65R019C7 , IPW60R330P6 .

History: BF908 | 2N7221 | FCP11N60F | IRLU120N | FX20VSJ-3 | FCP20N60 | FX20KMJ-06

 

 
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