Справочник MOSFET. IPW65R095C7

 

IPW65R095C7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPW65R095C7
   Маркировка: 65C7095
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 128 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 33 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.095 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для IPW65R095C7

 

 

IPW65R095C7 Datasheet (PDF)

 ..1. Size:1925K  infineon
 ipw65r095c7.pdf

IPW65R095C7 IPW65R095C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPW65R095C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPW65R095C7TO-2471 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpion

 ..2. Size:242K  inchange semiconductor
 ipw65r095c7.pdf

IPW65R095C7 IPW65R095C7

isc N-Channel MOSFET Transistor IPW65R095C7IIPW65R095C7FEATURESStatic drain-source on-resistance:RDS(on)95mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

 6.1. Size:3785K  infineon
 ipa65r099c6 ipb65r099c6 ipi65r099c6 ipp65r099c6 ipw65r099c6.pdf

IPW65R095C7 IPW65R095C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPx65R099C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R099C6, IPB65R099C6, IPP65R099C6IPA65R099C6, IPI65R099C6TO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs

 6.2. Size:3828K  infineon
 ipw65r099c6 ipb65r099c6 ipp65r099c6 ipa65r099c6 ipi65r099c6.pdf

IPW65R095C7 IPW65R095C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPx65R099C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R099C6, IPB65R099C6, IPP65R099C6IPA65R099C6, IPI65R099C6TO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs

 6.3. Size:242K  inchange semiconductor
 ipw65r099c6.pdf

IPW65R095C7 IPW65R095C7

isc N-Channel MOSFET Transistor IPW65R099C6IIPW65R099C6FEATURESStatic drain-source on-resistance:RDS(on)99mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

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History: SCT10N120

 

 
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