IPW60R160P6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPW60R160P6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 176 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.6 nS
Cossⓘ - Capacitancia de salida: 89 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de IPW60R160P6 MOSFET
IPW60R160P6 Datasheet (PDF)
ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R160P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R160P6, IPB60R160P6, IPP60R160P6,IPA60R160P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,
ipa60r160p6 ipp60r160p6 ipw60r160p6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R160P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R160P6, IPP60R160P6, IPA60R160P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
ipw60r160p6.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R160P6IIPW60R160P6FEATURESStatic drain-source on-resistance:RDS(on)160mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
ipa60r160c6 ipb60r160c6 ipp60r160c6 ipw60r160c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunct
Otros transistores... IPW65R041CFD , IPW65R037C6 , IPW65R019C7 , IPW60R330P6 , IPW60R280P6 , IPW60R230P6 , IPW60R190P6 , IPW60R180C7 , 2SK3878 , IPW60R125P6 , IPW60R099P6 , IPW60R099C7 , IPW60R070P6 , IPW60R041P6 , IPW60R040C7 , IPW50R280CE , IPW50R190CE .
History: IPW60R070P6 | FS70UMJ-06F | MXP1006AT
History: IPW60R070P6 | FS70UMJ-06F | MXP1006AT



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMTQ90N02A | JMTQ60N04B | JMTQ440P04A | JMTQ4407A | JMTQ380C03D | JMTQ3400D | JMTQ320N10A | JMTQ3010D | JMTQ3008A | JMTQ3006C | JMTQ3006B | JMTQ3005C | JMTQ3005A | JMTQ3003A | JMTQ250C03D | JMTLA3134K
Popular searches
17n80c3 | bc107 transistor | rjp63g4 datasheet | 2sc1115 | c3998 transistor | 2sa679 | 2sc3181 | 2sb324