IPW60R160P6 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPW60R160P6
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 176 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 23.8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 7.6 ns
Cossⓘ - Выходная емкость: 89 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: TO-247
- подбор MOSFET транзистора по параметрам
IPW60R160P6 Datasheet (PDF)
ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R160P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R160P6, IPB60R160P6, IPP60R160P6,IPA60R160P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,
ipa60r160p6 ipp60r160p6 ipw60r160p6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R160P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R160P6, IPP60R160P6, IPA60R160P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
ipw60r160p6.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R160P6IIPW60R160P6FEATURESStatic drain-source on-resistance:RDS(on)160mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
ipa60r160c6 ipb60r160c6 ipp60r160c6 ipw60r160c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunct
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: KRF7343 | FDMS3660AS | HFS2N60S | 40N15G-TA3-T | UT20N03 | WPM4801 | S68N08ZRN
History: KRF7343 | FDMS3660AS | HFS2N60S | 40N15G-TA3-T | UT20N03 | WPM4801 | S68N08ZRN



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