Справочник MOSFET. IPW60R160P6

 

IPW60R160P6 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPW60R160P6
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 176 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 23.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7.6 ns
   Cossⓘ - Выходная емкость: 89 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для IPW60R160P6

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPW60R160P6 Datasheet (PDF)

 ..1. Size:2645K  infineon
 ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf pdf_icon

IPW60R160P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R160P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R160P6, IPB60R160P6, IPP60R160P6,IPA60R160P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 ..2. Size:2909K  infineon
 ipa60r160p6 ipp60r160p6 ipw60r160p6.pdf pdf_icon

IPW60R160P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R160P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R160P6, IPP60R160P6, IPA60R160P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 ..3. Size:242K  inchange semiconductor
 ipw60r160p6.pdf pdf_icon

IPW60R160P6

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R160P6IIPW60R160P6FEATURESStatic drain-source on-resistance:RDS(on)160mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

 5.1. Size:1019K  infineon
 ipa60r160c6 ipb60r160c6 ipp60r160c6 ipw60r160c6.pdf pdf_icon

IPW60R160P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunct

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPW65R041CFD , IPW65R037C6 , IPW65R019C7 , IPW60R330P6 , IPW60R280P6 , IPW60R230P6 , IPW60R190P6 , IPW60R180C7 , 2SK3878 , IPW60R125P6 , IPW60R099P6 , IPW60R099C7 , IPW60R070P6 , IPW60R041P6 , IPW60R040C7 , IPW50R280CE , IPW50R190CE .

History: SP2106 | NTF5P03T3

 

 
Back to Top

 


 
.