IPW60R099P6 Todos los transistores

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IPW60R099P6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPW60R099P6

Código: 6R099P6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 278 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 37.9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 140 pF

Resistencia drenaje-fuente RDS(on): 0.099 Ohm

Empaquetado / Estuche: TO-247

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IPW60R099P6 Datasheet (PDF)

1.1. ipw60r099cpa.pdf Size:460K _infineon

IPW60R099P6
IPW60R099P6

IPW60R099CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.105 ? DS(on),max Q 60 nC g,typ Features Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt rated PG-TO247-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for: DC/DC converters for Automotive Applicatio

1.2. ipp60r099p6 ipw60r099p6.pdf Size:2269K _infineon

IPW60R099P6
IPW60R099P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R099P6, IPP60R099P6, IPA60R099P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

 1.3. ipw60r099c7.pdf Size:1541K _infineon

IPW60R099P6
IPW60R099P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPW60R099C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ C7 Power Transistor IPW60R099C7 TO-247 1 Description CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p

1.4. ipw60r099c6 2 1.pdf Size:1385K _infineon

IPW60R099P6
IPW60R099P6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2

 1.5. ipw60r099cp rev2[1].1 pcn.pdf Size:644K _infineon

IPW60R099P6
IPW60R099P6

IPW60R099CP TM C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,I / M . ON ON g 0.099 DS(on) max V "MIG:B: 9K 9I G6I:9 60 nC 60 nC g typ V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 688DG9>C< ID '"!" V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI PG?TO247? ?1 V 2 AIG6 ADL <6I: 8=6G<: ::7!"% # 4= =;0.4,77C /0=4290/ 1:< V %6G9 HL>I8=>C< 0

Otros transistores... IPW65R019C7 , IPW60R330P6 , IPW60R280P6 , IPW60R230P6 , IPW60R190P6 , IPW60R180C7 , IPW60R160P6 , IPW60R125P6 , IRF730 , IPW60R099C7 , IPW60R070P6 , IPW60R041P6 , IPW60R040C7 , IPW50R280CE , IPW50R190CE , IPU80R2K8CE , IPU80R1K4CE .

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