IPW60R099P6 PDF and Equivalents Search

 

IPW60R099P6 Specs and Replacement

Type Designator: IPW60R099P6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 140 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO-247

IPW60R099P6 substitution

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IPW60R099P6 datasheet

 ..1. Size:2269K  infineon
ipa60r099p6 ipp60r099p6 ipw60r099p6 ipw60r099p6 ipp60r099p6 ipa60r099p6.pdf pdf_icon

IPW60R099P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R099P6, IPP60R099P6, IPA60R099P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒

 ..2. Size:243K  inchange semiconductor
ipw60r099p6.pdf pdf_icon

IPW60R099P6

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099P6 IIPW60R099P6 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒

 4.1. Size:1400K  infineon
ipw60r099p7.pdf pdf_icon

IPW60R099P6

IPW60R099P7 MOSFET PG-TO 247-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS... See More ⇒

 4.2. Size:242K  inchange semiconductor
ipw60r099p7.pdf pdf_icon

IPW60R099P6

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R099P7 IIPW60R099P7 FEATURES Static drain-source on-resistance RDS(on) 99m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou... See More ⇒

Detailed specifications: IPW65R019C7 , IPW60R330P6 , IPW60R280P6 , IPW60R230P6 , IPW60R190P6 , IPW60R180C7 , IPW60R160P6 , IPW60R125P6 , IRFP250N , IPW60R099C7 , IPW60R070P6 , IPW60R041P6 , IPW60R040C7 , IPW50R280CE , IPW50R190CE , IPU80R2K8CE , IPU80R1K4CE .

History: SIHF22N60E | 2SK1172 | CS5N70A4 | IQE006NE2LM5

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