IRFP350LC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP350LC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 190 W
Tensión drenaje-fuente |Vds|: 400 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4 V
Carga de compuerta (Qg): 76(max) nC
Tiempo de elevación (tr): 54 nS
Conductancia de drenaje-sustrato (Cd): 390 pF
Resistencia drenaje-fuente RDS(on): 0.3 Ohm
Empaquetado / Estuche: TO247AC
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IRFP350LC Datasheet (PDF)
0.1. irfp350lc.pdf 
Size:160K _international_rectifier
PD - 9.1229IRFP350LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 400VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.30Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
0.2. irfp350lcpbf.pdf Size:1495K _international_rectifier
PD- 95714IRFP350LCPbF Lead-Free08/03/04Document Number: 91224 www.vishay.com1Downloaded from Elcodis.com electronic components distributor IRFP350LCPbFDocument Number: 91224 www.vishay.com2Downloaded from Elcodis.com electronic components distributor IRFP350LCPbFDocument Number: 91224 www.vishay.com3Downloaded from Elcodis.com electronic components distributor
0.3. irfp350lc sihfp350lc.pdf Size:1303K _vishay
IRFP350LC, SiHFP350LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.30 Enhanced 30V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 76 Isolated Central Mounting HoleQgs (nC) 20 Dynamic dV/dt RatedQgd (nC) 37 Repetitive Av
0.4. irfp350lc.pdf Size:365K _inchange_semiconductor
isc N-Channel MOSFET ransistor IRFP350LCFEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
Otros transistores... IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFZ48N , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 .
