IRFP350LC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP350LC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 190 W
Tensión drenaje-fuente (Vds): 400 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 18 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 76 nC
Resistencia drenaje-fuente RDS(on): 0.3 Ohm
Empaquetado / Estuche: TO3P
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IRFP350LC Datasheet (PDF)
1.1. irfp350lc.pdf 
Size:160K _international_rectifier
PD - 9.1229 IRFP350LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 400V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.30Ω Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional
1.2. irfp350lcpbf.pdf Size:1495K _international_rectifier
PD- 95714 IRFP350LCPbF • Lead-Free 08/03/04 Document Number: 91224 www.vishay.com 1 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number: 91224 www.vishay.com 2 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number: 91224 www.vishay.com 3 Downloaded from Elcodis.com electronic components distributor
1.3. irfp350lc sihfp350lc.pdf Size:1303K _vishay
IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 400 Available • Reduced Gate Drive Requirement RDS(on) (Ω)VGS = 10 V 0.30 • Enhanced 30V VGS Rating RoHS* COMPLIANT • Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 • Isolated Central Mounting Hole Qgs (nC) 20 • Dynamic dV/dt Rated Qgd (nC) 37 • Repetitive Av
1.4. irfp350lc.pdf Size:365K _inchange_semiconductor
isc N-Channel MOSFET ransistor IRFP350LC FEATURES ·Drain Current –I = 16A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.3Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies
Otros transistores... IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFZ48N , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 .
