All MOSFET. IRFP350LC Datasheet


IRFP350LC MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP350LC

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 190 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 76 nC

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO3P

IRFP350LC Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRFP350LC Datasheet (PDF)

0.1. irfp350lc.pdf Size:160K _international_rectifier


PD - 9.1229 IRFP350LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 400V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.30Ω Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

0.2. irfp350lcpbf.pdf Size:1495K _international_rectifier


PD- 95714 IRFP350LCPbF • Lead-Free 08/03/04 Document Number: 91224 1 Downloaded from electronic components distributor IRFP350LCPbF Document Number: 91224 2 Downloaded from electronic components distributor IRFP350LCPbF Document Number: 91224 3 Downloaded from electronic components distributor

 0.3. irfp350lc sihfp350lc.pdf Size:1303K _vishay


IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 400 Available • Reduced Gate Drive Requirement RDS(on) (Ω)VGS = 10 V 0.30 • Enhanced 30V VGS Rating RoHS* COMPLIANT • Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 • Isolated Central Mounting Hole Qgs (nC) 20 • Dynamic dV/dt Rated Qgd (nC) 37 • Repetitive Av

Datasheet: IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFZ48N , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 .


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