IPW50R280CE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPW50R280CE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 92 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.4 nS
Cossⓘ - Capacitancia de salida: 49 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: TO-247
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IPW50R280CE datasheet
ipw50r280ce ipp50r280ce.pdf
IPW50R280CE, IPP50R280CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co
ipp50r280ce ipw50r280ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R280CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPW50R280CE, IPP50R280CE TO-247 TO-220 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction
ipw50r280ce.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R280CE IIPW50R280CE FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So
Otros transistores... IPW60R180C7, IPW60R160P6, IPW60R125P6, IPW60R099P6, IPW60R099C7, IPW60R070P6, IPW60R041P6, IPW60R040C7, STP75NF75, IPW50R190CE, IPU80R2K8CE, IPU80R1K4CE, IPU80R1K0CE, IPU60R950C6, IPU60R600C6, IPU60R2K1CE, IPU60R2K0C6
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