IPW50R280CE - описание и поиск аналогов

IPW50R280CE, IPP50R280CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R280CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPW50R280CE, IPP50R280CE TO-247 TO-220 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R280CE IIPW50R280CE FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

IPW50R250CP TM C IMOSTM # A0

IPW50R299CP TM C IMOSTM # A0

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R250CP IIPW50R250CP FEATURES Static drain-source on-resistance RDS(on) 250m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW50R299CP IIPW50R299CP FEATURES Static drain-source on-resistance RDS(on) 299m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN