Справочник MOSFET. IPW50R280CE

 

IPW50R280CE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPW50R280CE
   Маркировка: 5R280CE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 92 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6.4 ns
   Cossⓘ - Выходная емкость: 49 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для IPW50R280CE

 

 

IPW50R280CE Datasheet (PDF)

 ..1. Size:2146K  infineon
 ipw50r280ce ipp50r280ce.pdf

IPW50R280CE IPW50R280CE

IPW50R280CE, IPP50R280CEMOSFETPG-TO 247 PG-TO 220500V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE series combines theexperience of the leading SJ MOSFET supplier with high class innovationwhile representing a co

 ..2. Size:2141K  infineon
 ipp50r280ce ipw50r280ce.pdf

IPW50R280CE IPW50R280CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R280CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPW50R280CE, IPP50R280CETO-247 TO-2201 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction

 ..3. Size:242K  inchange semiconductor
 ipw50r280ce.pdf

IPW50R280CE IPW50R280CE

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW50R280CEIIPW50R280CEFEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

 7.1. Size:537K  infineon
 ipw50r250cp.pdf

IPW50R280CE IPW50R280CE

IPW50R250CPTMCIMOSTM #:A0

 7.2. Size:533K  infineon
 ipw50r299cp.pdf

IPW50R280CE IPW50R280CE

IPW50R299CPTMCIMOSTM #:A0

 7.3. Size:242K  inchange semiconductor
 ipw50r250cp.pdf

IPW50R280CE IPW50R280CE

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW50R250CPIIPW50R250CPFEATURESStatic drain-source on-resistance:RDS(on)250mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 7.4. Size:243K  inchange semiconductor
 ipw50r299cp.pdf

IPW50R280CE IPW50R280CE

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW50R299CPIIPW50R299CPFEATURESStatic drain-source on-resistance:RDS(on)299mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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