IPU60R2K1CE Todos los transistores

 

IPU60R2K1CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPU60R2K1CE

Código: 6R2K1CE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 22 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.5 V

Tiempo de elevación (tr): 7 nS

Conductancia de drenaje-sustrato (Cd): 12 pF

Resistencia drenaje-fuente RDS(on): 2.1 Ohm

Empaquetado / Estuche: TO-251

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IPU60R2K1CE Datasheet (PDF)

1.1. ipu60r2k1ce.pdf Size:2232K _infineon

IPU60R2K1CE
IPU60R2K1CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R2K1CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R2K1CE, IPU60R2K1CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

2.1. ipu60r2k0c6.pdf Size:1052K _infineon

IPU60R2K1CE
IPU60R2K1CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPU60R2K0C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor IPU60R2K0C6 IPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneer

 4.1. ipu60r600c6.pdf Size:1034K _infineon

IPU60R2K1CE
IPU60R2K1CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPU60R600C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor IPU60R600C6 IPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pionee

4.2. ipu60r1k5ce.pdf Size:2307K _infineon

IPU60R2K1CE
IPU60R2K1CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R1K5CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R1K5CE, IPU60R1K5CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

 4.3. ipu60r950c6.pdf Size:1048K _infineon

IPU60R2K1CE
IPU60R2K1CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPU60R950C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor IPU60R950C6 IPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneer

4.4. ipu60r1k4c6.pdf Size:1053K _infineon

IPU60R2K1CE
IPU60R2K1CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPU60R1K4C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor IPU60R1K4C6 IPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneer

 4.5. ipu60r1k0ce.pdf Size:2314K _infineon

IPU60R2K1CE
IPU60R2K1CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R1K0CE, IPU60R1K0CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

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