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IPU60R2K1CE Specs and Replacement


   Type Designator: IPU60R2K1CE
   Marking Code: 6R2K1CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO-251
 

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IPU60R2K1CE datasheet

 ..1. Size:2232K  infineon
ipd60r2k1ce ipu60r2k1ce.pdf pdf_icon

IPU60R2K1CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R2K1CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R2K1CE, IPU60R2K1CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio... See More ⇒

 ..2. Size:261K  inchange semiconductor
ipu60r2k1ce.pdf pdf_icon

IPU60R2K1CE

isc N-Channel MOSFET Transistor IPU60R2K1CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

 6.1. Size:1052K  infineon
ipu60r2k0c6.pdf pdf_icon

IPU60R2K1CE

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPU60R2K0C6 Data Sheet Rev. 2.1 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPU60R2K0C6 IPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneer... See More ⇒

 6.2. Size:261K  inchange semiconductor
ipu60r2k0c6.pdf pdf_icon

IPU60R2K1CE

isc N-Channel MOSFET Transistor IPU60R2K0C6 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

Detailed specifications: IPW60R040C7 , IPW50R280CE , IPW50R190CE , IPU80R2K8CE , IPU80R1K4CE , IPU80R1K0CE , IPU60R950C6 , IPU60R600C6 , IRFP260 , IPU60R2K0C6 , IPU60R1K5CE , IPU60R1K4C6 , IPU60R1K0CE , IPU50R950CE , IPU50R3K0CE , IPU50R2K0CE , IPU50R1K4CE .

Keywords - IPU60R2K1CE MOSFET specs

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