IPU50R950CE Todos los transistores

 ..1. Size:2499K  infineon
 ipd50r950ce ipu50r950ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R950CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R950CE, IPU50R950CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

 ..2. Size:261K  inchange semiconductor
 ipu50r950ce.pdf

isc N-Channel MOSFET Transistor IPU50R950CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.1. Size:1624K  1
 ipd50r1k4ce ipu50r1k4ce 50s1k4ce.pdf

IPD50R1K4CE, IPU50R1K4CE MOSFET DPAK IPAK 500V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer an

 8.2. Size:2508K  infineon
 ipd50r2k0ce ipu50r2k0ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R2K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R2K0CE, IPU50R2K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

 8.3. Size:2513K  infineon
 ipd50r3k0ce ipu50r3k0ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R3K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R3K0CE, IPU50R3K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

 8.4. Size:2492K  infineon
 ipd50r1k4ce ipu50r1k4ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R1K4CE Data Sheet Rev. 2.2 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R1K4CE, IPU50R1K4CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

 8.5. Size:261K  inchange semiconductor
 ipu50r1k4ce.pdf

isc N-Channel MOSFET Transistor IPU50R1K4CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.6. Size:260K  inchange semiconductor
 ipu50r2k0ce.pdf

isc N-Channel MOSFET Transistor IPU50R2K0CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.7. Size:261K  inchange semiconductor
 ipu50r3k0ce.pdf

isc N-Channel MOSFET Transistor IPU50R3K0CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE