IPU06N03LAG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPU06N03LAG

Código: 06N03LA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2 V

trⓘ - Tiempo de subida: 7.2 nS

Cossⓘ - Capacitancia de salida: 800 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm

Encapsulados: TO-251

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IPU06N03LAG datasheet

 ..1. Size:516K  infineon
ipu06n03lag.pdf pdf_icon

IPU06N03LAG

IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 5.7 m DS(on),max Qualified according to JEDEC1) for target application I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance

 4.1. Size:420K  infineon
ipd06n03la ipf06n03la ips06n03la ipu06n03la.pdf pdf_icon

IPU06N03LAG

IPD06N03LA IPF06N03LA IPS06N03LA IPU06N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 5.7 m DS(on),max Qualified according to JEDEC1) for target application I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C

 9.1. Size:523K  infineon
ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf pdf_icon

IPU06N03LAG

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very lo

 9.2. Size:634K  infineon
ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf pdf_icon

IPU06N03LAG

Type IPD060N03L G IPF060N03L G IPS060N03L G IPU060N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 6 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low

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