IPU06N03LAG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPU06N03LAG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.2 nS
Cossⓘ - Capacitancia de salida: 800 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de IPU06N03LAG MOSFET
IPU06N03LAG Datasheet (PDF)
ipu06n03lag.pdf
IPD06N03LA G IPF06N03LA GIPS06N03LA G IPU06N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 5.7mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance
ipd06n03la ipf06n03la ips06n03la ipu06n03la.pdf
IPD06N03LA IPF06N03LAIPS06N03LA IPU06N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 5.7mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C
ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf
Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very lo
ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf
Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
Otros transistores... IPU60R1K5CE , IPU60R1K4C6 , IPU60R1K0CE , IPU50R950CE , IPU50R3K0CE , IPU50R2K0CE , IPU50R1K4CE , IPU13N03LAG , IRFB3607 , IPT059N15N3 , IPT020N10N3 , IPT015N10N5 , IPT012N08N5 , IPT007N06N , IPT004N03L , IPS65R950C6 , IPS65R1K5CE .
History: 2P978A | FDA79N15 | SPA06N60C3
History: 2P978A | FDA79N15 | SPA06N60C3
Liste
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