Справочник MOSFET. IPU06N03LAG

 

IPU06N03LAG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPU06N03LAG
   Маркировка: 06N03LA
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 83 W
   Предельно допустимое напряжение сток-исток |Uds|: 25 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2 V
   Максимально допустимый постоянный ток стока |Id|: 50 A
   Максимальная температура канала (Tj): 175 °C
   Время нарастания (tr): 7.2 ns
   Выходная емкость (Cd): 800 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0057 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для IPU06N03LAG

 

 

IPU06N03LAG Datasheet (PDF)

 ..1. Size:516K  infineon
ipu06n03lag.pdf

IPU06N03LAG IPU06N03LAG

IPD06N03LA G IPF06N03LA GIPS06N03LA G IPU06N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 5.7mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance

 4.1. Size:420K  infineon
ipd06n03la ipf06n03la ips06n03la ipu06n03la.pdf

IPU06N03LAG IPU06N03LAG

IPD06N03LA IPF06N03LAIPS06N03LA IPU06N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 5.7mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C

 9.1. Size:523K  infineon
ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf

IPU06N03LAG IPU06N03LAG

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very lo

 9.2. Size:634K  infineon
ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf

IPU06N03LAG IPU06N03LAG

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low

 9.3. Size:260K  inchange semiconductor
ipu060n03l.pdf

IPU06N03LAG IPU06N03LAG

isc N-Channel MOSFET Transistor IPU060N03LFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

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