IPS65R1K4C6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPS65R1K4C6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.9 nS
Cossⓘ - Capacitancia de salida: 18 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: TO-251
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IPS65R1K4C6 Datasheet (PDF)
ips65r1k4c6.pdf

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IPS65R650CEMOSFETIPAK SL650V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h
Otros transistores... IPT059N15N3 , IPT020N10N3 , IPT015N10N5 , IPT012N08N5 , IPT007N06N , IPT004N03L , IPS65R950C6 , IPS65R1K5CE , P60NF06 , IPS65R1K0CE , IPS090N03L , IPS075N03L , IPS060N03L , IPS050N03L , IPS040N03L , IPS031N03L , IPP65R660CFDA .
History: 2SJ506S | HM2369 | JCS640SH
History: 2SJ506S | HM2369 | JCS640SH



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