IPS65R1K4C6 Specs and Replacement

Type Designator: IPS65R1K4C6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.9 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-251

IPS65R1K4C6 substitution

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IPS65R1K4C6 datasheet

 ..1. Size:651K  infineon
 ips65r1k4c6.pdf pdf_icon

IPS65R1K4C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V 650V CoolMOS C6 Power Transistor IPS65R1K4C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPS65R1K4C6 IPAK SL 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion... See More ⇒

 6.1. Size:1733K  infineon
 ips65r1k0ce.pdf pdf_icon

IPS65R1K4C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 650V CoolMOS CE Power Transistor IPS65R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS CE Power Transistor IPS65R1K0CE IPAK SL 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and... See More ⇒

 6.2. Size:1727K  infineon
 ips65r1k5ce.pdf pdf_icon

IPS65R1K4C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 650V CoolMOS CE Power Transistor IPS65R1K5CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS CE Power Transistor IPS65R1K5CE IPAK SL 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and... See More ⇒

 8.1. Size:979K  1
 ips65r650ce.pdf pdf_icon

IPS65R1K4C6

IPS65R650CE MOSFET IPAK SL 650V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting h... See More ⇒

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Detailed specifications: IPT059N15N3, IPT020N10N3, IPT015N10N5, IPT012N08N5, IPT007N06N, IPT004N03L, IPS65R950C6, IPS65R1K5CE, AO4407, IPS65R1K0CE, IPS090N03L, IPS075N03L, IPS060N03L, IPS050N03L, IPS040N03L, IPS031N03L, IPP65R660CFDA

Keywords - IPS65R1K4C6 MOSFET specs

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 IPS65R1K4C6 substitution

 IPS65R1K4C6 replacement

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