IPS65R1K0CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPS65R1K0CE
   Código: 65CE1K0
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 23 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO-251

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IPS65R1K0CE Datasheet (PDF)

..1. Size:1733K infineon
ips65r1k0ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE650V CoolMOS CE Power TransistorIPS65R1K0CEData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS CE Power TransistorIPS65R1K0CEIPAK SL1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

6.1. Size:651K infineon
ips65r1k4c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPS65R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPS65R1K4C6IPAK SL1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pion

6.2. Size:1727K infineon
ips65r1k5ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE650V CoolMOS CE Power TransistorIPS65R1K5CEData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS CE Power TransistorIPS65R1K5CEIPAK SL1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

8.1. Size:979K 1
ips65r650ce.pdf

IPS65R650CEMOSFETIPAK SL650V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h

8.2. Size:1094K infineon
ipd65r400ce ips65r400ce.pdf

IPD65R400CE, IPS65R400CEMOSFETDPAK IPAK SL650V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE series combines the 13experience of the leading SJ MOSFET supplier with high class innovation.The resulting de

8.3. Size:651K infineon
ips65r950c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPS65R950C6 Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPS65R950C6IPAK SL1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pio

8.4. Size:261K inchange semiconductor
ips65r400ce.pdf

isc N-Channel MOSFET Transistor IPS65R400CEFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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