IPS65R1K0CE Todos los transistores

 

IPS65R1K0CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPS65R1K0CE
   Código: 65CE1K0
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 23 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO-251
     - Selección de transistores por parámetros

 

IPS65R1K0CE Datasheet (PDF)

 ..1. Size:1733K  infineon
ips65r1k0ce.pdf pdf_icon

IPS65R1K0CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE650V CoolMOS CE Power TransistorIPS65R1K0CEData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS CE Power TransistorIPS65R1K0CEIPAK SL1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 6.1. Size:651K  infineon
ips65r1k4c6.pdf pdf_icon

IPS65R1K0CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPS65R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPS65R1K4C6IPAK SL1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pion

 6.2. Size:1727K  infineon
ips65r1k5ce.pdf pdf_icon

IPS65R1K0CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE650V CoolMOS CE Power TransistorIPS65R1K5CEData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS CE Power TransistorIPS65R1K5CEIPAK SL1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 8.1. Size:979K  1
ips65r650ce.pdf pdf_icon

IPS65R1K0CE

IPS65R650CEMOSFETIPAK SL650V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IMW120R140M1H | CHM41A2PAGP

 

 
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