IPS65R1K0CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPS65R1K0CE
Código: 65CE1K0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 Vtrⓘ - Tiempo de subida: 5.2 nS
Cossⓘ - Capacitancia de salida: 23 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO-251
- Selección de transistores por parámetros
IPS65R1K0CE Datasheet (PDF)
ips65r1k0ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE650V CoolMOS CE Power TransistorIPS65R1K0CEData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS CE Power TransistorIPS65R1K0CEIPAK SL1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and
ips65r1k4c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPS65R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPS65R1K4C6IPAK SL1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pion
ips65r1k5ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE650V CoolMOS CE Power TransistorIPS65R1K5CEData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS CE Power TransistorIPS65R1K5CEIPAK SL1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and
ips65r650ce.pdf

IPS65R650CEMOSFETIPAK SL650V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IMW120R140M1H | CHM41A2PAGP
History: IMW120R140M1H | CHM41A2PAGP



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
2sc458 pinout | bc183l | tip35 datasheet | tip36c datasheet | 2sc461 | hy1906 | 2sc2238 | 2sc458 transistor