IPS65R1K0CE Todos los transistores

 

IPS65R1K0CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPS65R1K0CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 23 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO-251
 

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IPS65R1K0CE Datasheet (PDF)

 ..1. Size:1733K  infineon
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IPS65R1K0CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE650V CoolMOS CE Power TransistorIPS65R1K0CEData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS CE Power TransistorIPS65R1K0CEIPAK SL1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 6.1. Size:651K  infineon
ips65r1k4c6.pdf pdf_icon

IPS65R1K0CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPS65R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPS65R1K4C6IPAK SL1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pion

 6.2. Size:1727K  infineon
ips65r1k5ce.pdf pdf_icon

IPS65R1K0CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE650V CoolMOS CE Power TransistorIPS65R1K5CEData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS CE Power TransistorIPS65R1K5CEIPAK SL1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 8.1. Size:979K  1
ips65r650ce.pdf pdf_icon

IPS65R1K0CE

IPS65R650CEMOSFETIPAK SL650V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h

Otros transistores... IPT020N10N3 , IPT015N10N5 , IPT012N08N5 , IPT007N06N , IPT004N03L , IPS65R950C6 , IPS65R1K5CE , IPS65R1K4C6 , 18N50 , IPS090N03L , IPS075N03L , IPS060N03L , IPS050N03L , IPS040N03L , IPS031N03L , IPP65R660CFDA , IPP65R420CFD .

History: IPS040N03L

 

 
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