IPS65R1K0CE Datasheet and Replacement
Type Designator: IPS65R1K0CE
Marking Code: 65CE1K0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 23 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-251
IPS65R1K0CE substitution
IPS65R1K0CE Datasheet (PDF)
ips65r1k0ce.pdf

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ips65r1k5ce.pdf

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ips65r650ce.pdf

IPS65R650CEMOSFETIPAK SL650V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h
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