IRFP353 Todos los transistores

 

IRFP353 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP353

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente |Vds|: 350 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 73 nC

Tiempo de elevación (tr): 65(max) nS

Conductancia de drenaje-sustrato (Cd): 390 pF

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TO3P

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IRFP353 Datasheet (PDF)

..1. irfp350 irfp351 irfp352 irfp353.pdf Size:220K _samsung

IRFP353
IRFP353

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

..2. irfp353.pdf Size:236K _inchange_semiconductor

IRFP353
IRFP353

isc N-Channel MOSFET Transistor IRFP353FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a

0.1. irfp353r.pdf Size:162K _inchange_semiconductor

IRFP353
IRFP353

INCHANGE Semiconductor isc Product Specificationisc N-Channel MOSFET Transistor IRFP353(R)FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast SwitchingDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS

8.1. irfp350.pdf Size:872K _international_rectifier

IRFP353
IRFP353

PD - 94877IRFP350PbF Lead-Free12/9/03Document Number: 91225 www.vishay.com1IRFP350PbFDocument Number: 91225 www.vishay.com2IRFP350PbFDocument Number: 91225 www.vishay.com3IRFP350PbFDocument Number: 91225 www.vishay.com4IRFP350PbFDocument Number: 91225 www.vishay.com5IRFP350PbFDocument Number: 91225 www.vishay.com6IRFP350PbFTO-247AC Package Ou

8.2. irfp354.pdf Size:204K _international_rectifier

IRFP353
IRFP353

 8.3. irfp350cf.pdf Size:167K _international_rectifier

IRFP353

8.4. irfp350lc.pdf Size:160K _international_rectifier

IRFP353
IRFP353

PD - 9.1229IRFP350LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 400VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.30Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 16ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

 8.5. irfp354pbf.pdf Size:1795K _international_rectifier

IRFP353
IRFP353

PD- 95715IRFP354PbF Lead-Freewww.irf.com 18/3/04IRFP354PbF2 www.irf.comIRFP354PbFwww.irf.com 3IRFP354PbF4 www.irf.comIRFP354PbFwww.irf.com 5IRFP354PbF6 www.irf.comIRFP354PbFwww.irf.com 7IRFP354PbFTO-247AC Package Outline Dimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH ASSEMBLY PART

8.6. irfp350lcpbf.pdf Size:1495K _international_rectifier

IRFP353
IRFP353

PD- 95714IRFP350LCPbF Lead-Free08/03/04Document Number: 91224 www.vishay.com1Downloaded from Elcodis.com electronic components distributor IRFP350LCPbFDocument Number: 91224 www.vishay.com2Downloaded from Elcodis.com electronic components distributor IRFP350LCPbFDocument Number: 91224 www.vishay.com3Downloaded from Elcodis.com electronic components distributor

8.7. irfp350fi.pdf Size:407K _st

IRFP353
IRFP353

8.8. irfp350a.pdf Size:232K _fairchild_semi

IRFP353
IRFP353

IRFP350AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current: 10A (Max.) @ VDS = 400V Low RDS(ON): 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characterist

8.9. irfp350a.pdf Size:985K _samsung

IRFP353
IRFP353

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

8.10. irfp350-353.pdf Size:220K _samsung

IRFP353
IRFP353

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

8.11. irfp350lc sihfp350lc.pdf Size:1303K _vishay

IRFP353
IRFP353

IRFP350LC, SiHFP350LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400Available Reduced Gate Drive RequirementRDS(on) ()VGS = 10 V 0.30 Enhanced 30V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 76 Isolated Central Mounting HoleQgs (nC) 20 Dynamic dV/dt RatedQgd (nC) 37 Repetitive Av

8.12. irfp350 sihfp350.pdf Size:1574K _vishay

IRFP353
IRFP353

IRFP350, SiHFP350Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Compli

8.13. irfp350pbf.pdf Size:1571K _vishay

IRFP353
IRFP353

IRFP350, SiHFP350Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Lead

8.14. irfp350 sihfp350.pdf Size:1579K _infineon

IRFP353
IRFP353

IRFP350, SiHFP350Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.30RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 150 Fast SwitchingQgs (nC) 23 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Compli

8.15. irfp350.pdf Size:237K _inchange_semiconductor

IRFP353
IRFP353

isc N-Channel MOSFET ransistor IRFP350FEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies an

8.16. irfp350lc.pdf Size:365K _inchange_semiconductor

IRFP353
IRFP353

isc N-Channel MOSFET ransistor IRFP350LCFEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

8.17. irfp350a.pdf Size:237K _inchange_semiconductor

IRFP353
IRFP353

isc N-Channel MOSFET Transistor IRFP350AFEATURESDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies

8.18. irfp351r.pdf Size:163K _inchange_semiconductor

IRFP353
IRFP353

INCHANGE Semiconductor isc Product Specificationisc N-Channel MOSFET Transistor IRFP351(R)FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast SwitchingDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS

8.19. irfp350r.pdf Size:62K _inchange_semiconductor

IRFP353
IRFP353

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP350R FEATURES Drain Current ID= 16A@ TC=25 Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.3(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

8.20. irfp351.pdf Size:237K _inchange_semiconductor

IRFP353
IRFP353

isc N-Channel MOSFET Transistor IRFP351FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a

8.21. irfp352.pdf Size:236K _inchange_semiconductor

IRFP353
IRFP353

isc N-Channel MOSFET Transistor IRFP352FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a

8.22. irfp352r.pdf Size:162K _inchange_semiconductor

IRFP353
IRFP353

INCHANGE Semiconductor isc Product Specificationisc N-Channel MOSFET Transistor IRFP352(R)FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast SwitchingDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS

Otros transistores... IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , P0903BDG , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 .

 

 
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