IRFP354 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP354 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 190 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 44 nS
Cossⓘ - Capacitancia de salida: 720 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Encapsulados: TO247AC
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IRFP354 datasheet
..1. Size:1795K international rectifier
irfp354pbf.pdf 
PD- 95715 IRFP354PbF Lead-Free www.irf.com 1 8/3/04 IRFP354PbF 2 www.irf.com IRFP354PbF www.irf.com 3 IRFP354PbF 4 www.irf.com IRFP354PbF www.irf.com 5 IRFP354PbF 6 www.irf.com IRFP354PbF www.irf.com 7 IRFP354PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE T HIS IS AN IRFPE30 WITH ASSEMBLY PART
8.2. Size:1495K international rectifier
irfp350lcpbf.pdf
PD- 95714 IRFP350LCPbF Lead-Free 08/03/04 Document Number 91224 www.vishay.com 1 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number 91224 www.vishay.com 2 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number 91224 www.vishay.com 3 Downloaded from Elcodis.com electronic components distributor
8.3. Size:160K international rectifier
irfp350lc.pdf
PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 400V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.30 Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional
8.4. Size:872K international rectifier
irfp350.pdf
PD - 94877 IRFP350PbF Lead-Free 12/9/03 Document Number 91225 www.vishay.com 1 IRFP350PbF Document Number 91225 www.vishay.com 2 IRFP350PbF Document Number 91225 www.vishay.com 3 IRFP350PbF Document Number 91225 www.vishay.com 4 IRFP350PbF Document Number 91225 www.vishay.com 5 IRFP350PbF Document Number 91225 www.vishay.com 6 IRFP350PbF TO-247AC Package Ou
8.6. Size:232K fairchild semi
irfp350a.pdf
IRFP350A FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist
8.7. Size:220K samsung
irfp350-353.pdf
This datasheet has been downloaded from www.DatasheetCatalog.com Datasheets for electronic components.
8.8. Size:985K samsung
irfp350a.pdf
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu
8.10. Size:1571K vishay
irfp350pbf.pdf
IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Lead
8.11. Size:1574K vishay
irfp350 sihfp350.pdf
IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Compli
8.12. Size:1303K vishay
irfp350lc sihfp350lc.pdf
IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.30 Enhanced 30V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 Isolated Central Mounting Hole Qgs (nC) 20 Dynamic dV/dt Rated Qgd (nC) 37 Repetitive Av
8.13. Size:1579K infineon
irfp350 sihfp350.pdf
IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Compli
8.14. Size:237K inchange semiconductor
irfp351.pdf
isc N-Channel MOSFET Transistor IRFP351 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a
8.15. Size:236K inchange semiconductor
irfp353.pdf
isc N-Channel MOSFET Transistor IRFP353 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a
8.16. Size:162K inchange semiconductor
irfp352r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP352(R) FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS
8.17. Size:163K inchange semiconductor
irfp351r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP351(R) FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS
8.18. Size:237K inchange semiconductor
irfp350a.pdf
isc N-Channel MOSFET Transistor IRFP350A FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
8.19. Size:162K inchange semiconductor
irfp353r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP353(R) FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS
8.20. Size:365K inchange semiconductor
irfp350lc.pdf
isc N-Channel MOSFET ransistor IRFP350LC FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
8.21. Size:236K inchange semiconductor
irfp352.pdf
isc N-Channel MOSFET Transistor IRFP352 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a
8.22. Size:62K inchange semiconductor
irfp350r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP350R FEATURES Drain Current ID= 16A@ TC=25 Drain Source Voltage- VDSS= 400V(Min) Static Drain-Source On-Resistance RDS(on) = 0.3 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI
8.23. Size:237K inchange semiconductor
irfp350.pdf
isc N-Channel MOSFET ransistor IRFP350 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies an
Otros transistores... IRFP344, IRFP350, IRFP350A, IRFP350FI, IRFP350LC, IRFP351, IRFP352, IRFP353, 2SK3568, IRFP360, IRFP360LC, IRFP3710, IRFP430, IRFP431, IRFP432, IRFP433, IRFP440
