Справочник MOSFET. IRFP354

 

IRFP354 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP354

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 190 W

Предельно допустимое напряжение сток-исток (Uds): 450 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 14 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 160 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.35 Ohm

Тип корпуса: TO3P

Аналог (замена) для IRFP354

 

 

IRFP354 Datasheet (PDF)

1.1. irfp354.pdf Size:204K _international_rectifier

IRFP354
IRFP354



1.2. irfp354pbf.pdf Size:1795K _international_rectifier

IRFP354
IRFP354

PD- 95715 IRFP354PbF • Lead-Free www.irf.com 1 8/3/04 IRFP354PbF 2 www.irf.com IRFP354PbF www.irf.com 3 IRFP354PbF 4 www.irf.com IRFP354PbF www.irf.com 5 IRFP354PbF 6 www.irf.com IRFP354PbF www.irf.com 7 IRFP354PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH ASSEMBLY PART

 4.1. irfp350fi.pdf Size:407K _st

IRFP354
IRFP354



4.2. irfp350a.pdf Size:232K _fairchild_semi

IRFP354
IRFP354

IRFP350A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology RDS(on) = 0.3Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

 4.3. irfp350.pdf Size:872K _international_rectifier

IRFP354
IRFP354

PD - 94877 IRFP350PbF • Lead-Free 12/9/03 Document Number: 91225 www.vishay.com 1 IRFP350PbF Document Number: 91225 www.vishay.com 2 IRFP350PbF Document Number: 91225 www.vishay.com 3 IRFP350PbF Document Number: 91225 www.vishay.com 4 IRFP350PbF Document Number: 91225 www.vishay.com 5 IRFP350PbF Document Number: 91225 www.vishay.com 6 IRFP350PbF TO-247AC Package Ou

4.4. irfp350cf.pdf Size:167K _international_rectifier

IRFP354



 4.5. irfp350lc.pdf Size:160K _international_rectifier

IRFP354
IRFP354

PD - 9.1229 IRFP350LC HEXFET® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 400V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.30Ω Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

4.6. irfp350lcpbf.pdf Size:1495K _international_rectifier

IRFP354
IRFP354

PD- 95714 IRFP350LCPbF • Lead-Free 08/03/04 Document Number: 91224 www.vishay.com 1 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number: 91224 www.vishay.com 2 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number: 91224 www.vishay.com 3 Downloaded from Elcodis.com electronic components distributor

4.7. irfp350a.pdf Size:985K _samsung

IRFP354
IRFP354

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology Ω RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

4.8. irfp350-353.pdf Size:220K _samsung

IRFP354
IRFP354

 This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.

4.9. irfp350lc sihfp350lc.pdf Size:1303K _vishay

IRFP354
IRFP354

IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 400 Available • Reduced Gate Drive Requirement RDS(on) (Ω)VGS = 10 V 0.30 • Enhanced 30V VGS Rating RoHS* COMPLIANT • Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 • Isolated Central Mounting Hole Qgs (nC) 20 • Dynamic dV/dt Rated Qgd (nC) 37 • Repetitive Av

4.10. irfp350 sihfp350.pdf Size:1574K _vishay

IRFP354
IRFP354

IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.30 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 • Fast Switching Qgs (nC) 23 • Ease of Paralleling Qgd (nC) 80 • Simple Drive Requirements Configuration Single • Compli

4.11. irfp350pbf.pdf Size:1571K _vishay

IRFP354
IRFP354

IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.30 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 • Fast Switching Qgs (nC) 23 • Ease of Paralleling Qgd (nC) 80 • Simple Drive Requirements Configuration Single • Lead

4.12. irfp350.pdf Size:237K _inchange_semiconductor

IRFP354
IRFP354

isc N-Channel MOSFET ransistor IRFP350 FEATURES ·Drain Current –I = 16A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.3Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies an

4.13. irfp353r.pdf Size:162K _inchange_semiconductor

IRFP354
IRFP354

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP353(R) FEATURES ·Drain Current –I = 13A@ T =25℃ D C ·Drain Source Voltage- : V = 350V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

4.14. irfp350a.pdf Size:237K _inchange_semiconductor

IRFP354
IRFP354

isc N-Channel MOSFET Transistor IRFP350A FEATURES ·Drain Current –I = 17A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.3Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

4.15. irfp351r.pdf Size:163K _inchange_semiconductor

IRFP354
IRFP354

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP351(R) FEATURES ·Drain Current –I = 13A@ T =25℃ D C ·Drain Source Voltage- : V = 350V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.3Ω(Max) DS(on) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

4.16. irfp350r.pdf Size:62K _inchange_semiconductor

IRFP354
IRFP354

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP350R FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

4.17. irfp353.pdf Size:236K _inchange_semiconductor

IRFP354
IRFP354

isc N-Channel MOSFET Transistor IRFP353 FEATURES ·Drain Current –I = 13A@ T =25℃ D C ·Drain Source Voltage- : V = 350V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

4.18. irfp351.pdf Size:237K _inchange_semiconductor

IRFP354
IRFP354

isc N-Channel MOSFET Transistor IRFP351 FEATURES ·Drain Current –I = 15A@ T =25℃ D C ·Drain Source Voltage- : V = 350V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.3Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

4.19. irfp352.pdf Size:236K _inchange_semiconductor

IRFP354
IRFP354

isc N-Channel MOSFET Transistor IRFP352 FEATURES ·Drain Current –I = 13A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

4.20. irfp352r.pdf Size:162K _inchange_semiconductor

IRFP354
IRFP354

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP352(R) FEATURES ·Drain Current –I = 13A@ T =25℃ D C ·Drain Source Voltage- : V = 400V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF9540 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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