IPP60R380P6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP60R380P6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 42 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Paquete / Cubierta: TO-220
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IPP60R380P6 Datasheet (PDF)
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ipp60r380p6.pdf
isc N-Channel MOSFET Transistor IPP60R380P6IIPP60R380P6FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use
ipp60r380e6.pdf
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ipp60r380c6.pdf
isc N-Channel MOSFET Transistor IPP60R380C6IIPP60R380C6FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use
Otros transistores... IPP65R110CFDA , IPP65R110CFD , IPP65R099C6 , IPP65R095C7 , IPP65R074C6 , IPP65R065C7 , IPP65R045C7 , IPP60R600P6 , 2N7000 , IPP60R330P6 , IPP60R280P6 , IPP60R230P6 , IPP60R1K4C6 , IPP60R190P6 , IPP60R180C7 , IPP60R160P6 , IPP60R125P6 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918