IPP60R380P6 Specs and Replacement
Type Designator: IPP60R380P6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 42 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-220
IPP60R380P6 substitution
- MOSFET ⓘ Cross-Reference Search
IPP60R380P6 datasheet
ipa60r380p6 ipd60r380p6 ipp60r380p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R380P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R380P6, IPA60R380P6, IPD60R380P6 TO-220 TO-220 FP DPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accor... See More ⇒
ipb60r380p6 ipp60r380p6 ipd60r380p6 ipa60r380p6.pdf
IPB60R380P6, IPP60R380P6, IPD60R380P6, IPA60R380P6 MOSFET D PAK PG-TO 220 DPAK 600V CoolMOS P6 Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 2 pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 1 3 3 experience of the leading SJ MOSFET suppli... See More ⇒
ipp60r380p6.pdf
isc N-Channel MOSFET Transistor IPP60R380P6 IIPP60R380P6 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒
ipp60r380e6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R380E6 Data Sheet Rev. 2.0, 2010-04-09 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R380E6, IPA60R380E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an... See More ⇒
Detailed specifications: IPP65R110CFDA, IPP65R110CFD, IPP65R099C6, IPP65R095C7, IPP65R074C6, IPP65R065C7, IPP65R045C7, IPP60R600P6, IRLB3034, IPP60R330P6, IPP60R280P6, IPP60R230P6, IPP60R1K4C6, IPP60R190P6, IPP60R180C7, IPP60R160P6, IPP60R125P6
Keywords - IPP60R380P6 MOSFET specs
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