IPP60R190P6 Todos los transistores

 

IPP60R190P6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP60R190P6
   Código: 6R190P6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 151 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 37 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO-220

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IPP60R190P6 Datasheet (PDF)

 ..1. Size:2872K  infineon
ipa60r190p6 ipp60r190p6 ipw60r190p6.pdf

IPP60R190P6
IPP60R190P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R190P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R190P6, IPP60R190P6, IPA60R190P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 ..2. Size:3091K  infineon
ipw60r190p6 ipb60r190p6 ipp60r190p6 ipa60r190p6.pdf

IPP60R190P6
IPP60R190P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R190P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R190P6, IPB60R190P6, IPP60R190P6,IPA60R190P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 ..3. Size:1469K  infineon
ipp60r190p6.pdf

IPP60R190P6
IPP60R190P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPP60R190P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R190P6TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

 ..4. Size:245K  inchange semiconductor
ipp60r190p6.pdf

IPP60R190P6
IPP60R190P6

isc N-Channel MOSFET Transistor IPP60R190P6IIPP60R190P6FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use

 5.1. Size:1819K  infineon
ipp60r190c62.1.pdf

IPP60R190P6
IPP60R190P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R190C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 5.2. Size:851K  infineon
ipw60r190e6 ipp60r190e6 ipa60r190e6.pdf

IPP60R190P6
IPP60R190P6

C lMO e n i t I 1 I 1 I 1 O 47 O O 1 Descriptint bC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n pi neee b In ine n e n l ie C lMO eie mbine t eexpeien e t e le in MO pplie it i l inn ti n e e ltin e i e p i e ll bene it t it in MO ile n t i i in e e e xtemel l it in n n ti nl e m ke it in

 5.3. Size:1150K  infineon
ipp60r190e6.pdf

IPP60R190P6
IPP60R190P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R190E6Data SheetRev. 2.0, 2010-05-03FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R190E6, IPA60R190E6IPW60R190E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

 5.4. Size:1214K  infineon
ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf

IPP60R190P6
IPP60R190P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to

 5.5. Size:244K  inchange semiconductor
ipp60r190c6.pdf

IPP60R190P6
IPP60R190P6

isc N-Channel MOSFET Transistor IPP60R190C6IIPP60R190C6FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use

 5.6. Size:244K  inchange semiconductor
ipp60r190e6.pdf

IPP60R190P6
IPP60R190P6

isc N-Channel MOSFET Transistor IPP60R190E6IIPP60R190E6FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

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