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IPP60R190P6 Spec and Replacement


   Type Designator: IPP60R190P6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-220

 IPP60R190P6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP60R190P6 Specs

 ..1. Size:2872K  infineon
ipa60r190p6 ipp60r190p6 ipw60r190p6.pdf pdf_icon

IPP60R190P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPP60R190P6, IPA60R190P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒

 ..2. Size:3091K  infineon
ipw60r190p6 ipb60r190p6 ipp60r190p6 ipa60r190p6.pdf pdf_icon

IPP60R190P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPB60R190P6, IPP60R190P6, IPA60R190P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, ... See More ⇒

 ..3. Size:1469K  infineon
ipp60r190p6.pdf pdf_icon

IPP60R190P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPP60R190P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R190P6 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

 ..4. Size:245K  inchange semiconductor
ipp60r190p6.pdf pdf_icon

IPP60R190P6

isc N-Channel MOSFET Transistor IPP60R190P6 IIPP60R190P6 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒

Detailed specifications: IPP65R065C7 , IPP65R045C7 , IPP60R600P6 , IPP60R380P6 , IPP60R330P6 , IPP60R280P6 , IPP60R230P6 , IPP60R1K4C6 , EMB04N03H , IPP60R180C7 , IPP60R160P6 , IPP60R125P6 , IPP60R099P6 , IPP60R099C7 , IPP60R074C6 , IPP60R040C7 , IPP50R500CE .

Keywords - IPP60R190P6 MOSFET specs

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