IPP60R160P6 Todos los transistores

 

IPP60R160P6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP60R160P6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 176 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.6 nS
   Cossⓘ - Capacitancia de salida: 89 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

IPP60R160P6 Datasheet (PDF)

 ..1. Size:2645K  infineon
ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf pdf_icon

IPP60R160P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R160P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R160P6, IPB60R160P6, IPP60R160P6,IPA60R160P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

 ..2. Size:2909K  infineon
ipa60r160p6 ipp60r160p6 ipw60r160p6.pdf pdf_icon

IPP60R160P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R160P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R160P6, IPP60R160P6, IPA60R160P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 ..3. Size:245K  inchange semiconductor
ipp60r160p6.pdf pdf_icon

IPP60R160P6

isc N-Channel MOSFET Transistor IPP60R160P6IIPP60R160P6FEATURESStatic drain-source on-resistance:RDS(on) 0.16Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONProvide all benefits of a fast switching super junction MOS while notsacrificing ease of use

 4.1. Size:1627K  infineon
ipp60r160p7.pdf pdf_icon

IPP60R160P6

IPP60R160P7MOSFETPG-TO 220600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

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History: NTJD4105CT1G | BUK7Y153-100E | BLP012N08-T | BLP12N10G-U | VN2110 | 2SK3880 | IMW120R140M1H

 

 
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