IPP60R160P6 - описание и поиск аналогов

 

Аналоги IPP60R160P6. Основные параметры


   Наименование производителя: IPP60R160P6
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 176 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 23.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7.6 ns
   Cossⓘ - Выходная емкость: 89 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для IPP60R160P6

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPP60R160P6 даташит

 ..1. Size:2645K  infineon
ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdfpdf_icon

IPP60R160P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPB60R160P6, IPP60R160P6, IPA60R160P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,

 ..2. Size:2909K  infineon
ipa60r160p6 ipp60r160p6 ipw60r160p6.pdfpdf_icon

IPP60R160P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPP60R160P6, IPA60R160P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 ..3. Size:245K  inchange semiconductor
ipp60r160p6.pdfpdf_icon

IPP60R160P6

isc N-Channel MOSFET Transistor IPP60R160P6 IIPP60R160P6 FEATURES Static drain-source on-resistance RDS(on) 0.16 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use

 4.1. Size:1627K  infineon
ipp60r160p7.pdfpdf_icon

IPP60R160P6

IPP60R160P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ

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