IRFP431 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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IRFP431 Datasheet (PDF)

1.1. irfp4310zpbf.pdf Size:299K _upd-mosfet

PD - 97123A IRFP4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

1.2. irfp4310z.pdf Size:244K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4310Z， IIRFP4310Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.0mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Unin

 4.1. irfp4321pbf.pdf Size:291K _upd-mosfet

PD - 97106 IRFP4321PbF HEXFET® Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits 12m: RDS(on) typ. Benefits max. 15.5m: l Low RDSON Reduces Losses ID 78A l Low Gate Charge Improves the Switching Performance D l Improved Diode Recovery

4.2. irfp4332pbf.pdf Size:298K _upd-mosfet

PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 °C and Pass Switch Applications l Low QG for

 4.3. irfp4368pbf.pdf Size:277K _upd-mosfet

PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in HEXFET® Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 1.46mΩ l Hard Switched and High Frequency Circuits max. 1.85mΩ G ID (Silicon Limited) 350Ac S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rugge

4.4. irfp430-433 irf830-833.pdf Size:345K _samsung



 4.5. irfp4368.pdf Size:244K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4368，IIRFP4368 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.85mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninter

4.6. irfp4321.pdf Size:243K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4321，IIRFP4321 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤15.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Motion Control Applications ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible

4.7. irfp4332.pdf Size:242K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4332，IIRFP4332 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤33mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Swi

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