IRFP431 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP431

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 450 V

Corriente continua de drenaje (Id): 4.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1.5 Ohm

Empaquetado / Estuche: TO3P

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IRFP431 Datasheet (PDF)

1.1. irfp4310zpbf.pdf Size:299K _upd-mosfet

PD - 97123A IRFP4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

4.1. irfp4321pbf.pdf Size:291K _upd-mosfet

PD - 97106 IRFP4321PbF HEXFET® Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits 12m: RDS(on) typ. Benefits max. 15.5m: l Low RDSON Reduces Losses ID 78A l Low Gate Charge Improves the Switching Performance D l Improved Diode Recovery

4.2. irfp4332pbf.pdf Size:298K _upd-mosfet

PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 °C and Pass Switch Applications l Low QG for

4.3. irfp4368pbf.pdf Size:277K _upd-mosfet

PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in HEXFET® Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 1.46mΩ l Hard Switched and High Frequency Circuits max. 1.85mΩ G ID (Silicon Limited) 350Ac S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rugge

4.4. irfp430-433 irf830-833.pdf Size:345K _samsung