IRFP431 Datasheet. Specs and Replacement
Type Designator: IRFP431 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 86 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO3P
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IRFP431 datasheet
irfp4310zpbf.pdf
PD - 97123A IRFP4310ZPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt ... See More ⇒
auirfp4310z.pdf
AUTOMOTIVE GRADE AUIRFP4310Z Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175 C Operating Temperature ID (Silicon Limited) 128A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Autom... See More ⇒
irfp4310z.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4310Z IIRFP4310Z FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Unin... See More ⇒
Detailed specifications: IRFP351, IRFP352, IRFP353, IRFP354, IRFP360, IRFP360LC, IRFP3710, IRFP430, P55NF06, IRFP432, IRFP433, IRFP440, IRFP440A, IRFP441, IRFP442, IRFP443, IRFP448
Keywords - IRFP431 MOSFET specs
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