IRFP431 Datasheet and Replacement
Type Designator: IRFP431
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 86 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO3P
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IRFP431 Datasheet (PDF)
irfp4310zpbf.pdf

PD - 97123AIRFP4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)134A cID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dt
auirfp4310z.pdf

AUTOMOTIVE GRADE AUIRFP4310Z Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175C Operating Temperature ID (Silicon Limited) 128A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Autom
irfp4310z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4310ZIIRFP4310ZFEATURESStatic drain-source on-resistance:RDS(on)6.0mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUnin
Datasheet: IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , RFP50N06 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 .
History: IRFP433 | IRFP432 | FDMS3610S | IRFP360LC | FMM75-01F
Keywords - IRFP431 MOSFET datasheet
IRFP431 cross reference
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History: IRFP433 | IRFP432 | FDMS3610S | IRFP360LC | FMM75-01F



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