All MOSFET. IRFP431 Datasheet

 

IRFP431 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP431

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 450 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO3P

IRFP431 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP431 Datasheet (PDF)

1.1. irfp4310zpbf.pdf Size:299K _upd-mosfet

IRFP431
IRFP431

PD - 97123A IRFP4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

1.2. irfp4310zpbf.pdf Size:299K _international_rectifier

IRFP431
IRFP431

PD - 97123A IRFP4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

 1.3. irfp4310z.pdf Size:244K _inchange_semiconductor

IRFP431
IRFP431

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4310Z, IIRFP4310Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.0mΩ ·Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Unin

Datasheet: IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , 2SK2996 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 , IRFP448 .

 

 
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