IPP037N08N3GE8181 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP037N08N3GE8181
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 79 nS
Cossⓘ - Capacitancia de salida: 1640 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: TO-220
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IPP037N08N3GE8181 datasheet
ipp037n08n3ge8181 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf
IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I 1 D Q H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 + D n) #) ' ' ! Q ' 381>>5?B=1
ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf
IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 3.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested
ipp037n08n3.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP037N08N3 IIPP037N08N3 FEATURES Static drain-source on-resistance RDS(on) 3.75m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUT
Otros transistores... IPP083N10N5, IPP080N03L, IPP060N06N, IPP055N03L, IPP052N08N5, IPP04CN10N, IPP042N03L, IPP040N06N, IRFB4115, IPP034N08N5, IPP034N03L, IPP030N10N5, IPP029N06N, IPP027N08N5, IPP023N10N5, IPP023N08N5, IPP020N08N5
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