IRFP3710PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP3710PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 57 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 59 nS

Cossⓘ - Capacitancia de salida: 640 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO247AC

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IRFP3710PBF datasheet

 ..1. Size:229K  international rectifier
 irfp3710pbf.pdf pdf_icon

IRFP3710PBF

PD - 95053A IRFP3710PbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.025 G l Lead-Free Description ID = 57A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili

 6.1. Size:185K  international rectifier
 irfp3710.pdf pdf_icon

IRFP3710PBF

PD-91490C IRFP3710 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.025W Fully Avalanche Rated G ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit

 6.2. Size:242K  inchange semiconductor
 irfp3710.pdf pdf_icon

IRFP3710PBF

isc N-Channel MOSFET Transistor IRFP3710 IIRFP3710 FEATURES Static drain-source on-resistance RDS(on) 25m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 8.1. Size:214K  international rectifier
 irfp3703pbf.pdf pdf_icon

IRFP3710PBF

PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Synchronous Rectification 30V 0.0028 210A l Active ORing l Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 1

MOSTRAR MÁS

Otros transistores... IRFP350R, IRFP351R, IRFP352R, IRFP353R, IRFP354PBF, IRFP360PBF, IRFP362, IRFP3703PBF, AON7506, IPL65R725CFD, IPL65R660E6, IPL65R650C6S, IPL65R460CFD, IPL65R420E6, IPL65R340CFD, IPL65R310E6, IPL65R230C7