IRFP3710PBF Todos los transistores

 

IRFP3710PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFP3710PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 57 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 640 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO247AC
 
   - Selección ⓘ de transistores por parámetros

 

IRFP3710PBF Datasheet (PDF)

 ..1. Size:229K  international rectifier
 irfp3710pbf.pdf pdf_icon

IRFP3710PBF

PD - 95053AIRFP3710PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.025Gl Lead-FreeDescription ID = 57ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per sili

 6.1. Size:185K  international rectifier
 irfp3710.pdf pdf_icon

IRFP3710PBF

PD-91490CIRFP3710HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.025W Fully Avalanche RatedGID = 57ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit

 6.2. Size:242K  inchange semiconductor
 irfp3710.pdf pdf_icon

IRFP3710PBF

isc N-Channel MOSFET Transistor IRFP3710IIRFP3710FEATURESStatic drain-source on-resistance:RDS(on)25mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 8.1. Size:214K  international rectifier
 irfp3703pbf.pdf pdf_icon

IRFP3710PBF

PD - 95481SMPS MOSFETIRFP3703PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Synchronous Rectification 30V 0.0028 210Al Active ORingl Lead-FreeBenefitsl Ultra Low On-Resistancel Low Gate Impedance to Reduce SwitchingLossesl Fully Avalanche RatedTO-247ACAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 1

MOSTRAR MÁS

Otros transistores... IRFP350R , IRFP351R , IRFP352R , IRFP353R , IRFP354PBF , IRFP360PBF , IRFP362 , IRFP3703PBF , AON7506 , IPL65R725CFD , IPL65R660E6 , IPL65R650C6S , IPL65R460CFD , IPL65R420E6 , IPL65R340CFD , IPL65R310E6 , IPL65R230C7 .

 

 
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