IPL65R420E6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPL65R420E6
   Código: 65E6420
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 41 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
   Paquete / Cubierta: THINPAK8X8

Búsqueda de reemplazo de MOSFET IPL65R420E6

IPL65R420E6 Datasheet (PDF)

..1. Size:1584K infineon
ipl65r420e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS ThinkPAK 8x8650V CoolMOS E6 Power TransistorIPL65R420E6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPL65R420E6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle

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ipl65r195c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R195C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R195C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

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ipl65r1k5c6s.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K5C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K5C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

8.6. Size:1601K infineon
ipl65r130c7.pdf

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ipl65r099c7.pdf

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8.8. Size:1615K infineon
ipl65r165cfd.pdf

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ipl65r210cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R210CFDData SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R210CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

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ipl65r310e6.pdf

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ipl65r190e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS ThinkPAK 8x8650V CoolMOS E6 Power TransistorIPL65R190E6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPL65R190E6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle

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ipl65r340cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R340CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R340CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ

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ipl65r230c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R230C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R230C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

8.14. Size:1593K infineon
ipl65r660e6.pdf

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ipl65r650c6s.pdf

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