IRFP440A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP440A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 162 W
Tensión drenaje-fuente |Vds|: 500 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 8.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4 V
Carga de compuerta (Qg): 57 nC
Tiempo de elevación (tr): 22 nS
Conductancia de drenaje-sustrato (Cd): 150 pF
Resistencia drenaje-fuente RDS(on): 0.85 Ohm
Paquete / Caja (carcasa): TO3P
Búsqueda de reemplazo de MOSFET IRFP440A
IRFP440A Datasheet (PDF)
..1. irfp440a.pdf 
Size:932K _samsung
Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
..2. irfp440a.pdf Size:237K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP440AFEATURESDrain Current I = 8.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplie
7.1. auirfp4409.pdf Size:373K _international_rectifier
AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical
7.2. irfp440.pdf Size:925K _international_rectifier
PD - 95198IRFP440PbF Lead-Free4/27/04Document Number: 91228 www.vishay.com1IRFP440PbFDocument Number: 91228 www.vishay.com2IRFP440PbFDocument Number: 91228 www.vishay.com3IRFP440PbFDocument Number: 91228 www.vishay.com4IRFP440PbFDocument Number: 91228 www.vishay.com5IRFP440PbFDocument Number: 91228 www.vishay.com6IRFP440PbFTO-247AC Package Ou
7.3. irfp440r irfp441r irfp442r irfp443r.pdf Size:698K _njs
7.4. irfp440-443 irf840-843.pdf Size:192K _samsung
7.5. irfp440pbf.pdf Size:1449K _vishay
IRFP440, SiHFP440Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.85 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 63COMPLIANT Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Lead (Pb
7.6. irfp440 sihfp440.pdf Size:1460K _vishay
IRFP440, SiHFP440Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.85RoHS* Isolated Central Mounting HoleCOMPLIANTQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 11 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Complian
7.7. auirfp4409.pdf Size:476K _infineon
AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical
7.8. irfp440r.pdf Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP440RFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
Otros transistores... IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP260 , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC .
