All MOSFET. IRFP440A Datasheet

 

IRFP440A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP440A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 162 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 8.5 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1190 pF

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO3P

IRFP440A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP440A Datasheet (PDF)

1.1. irfp440a.pdf Size:237K _update-mosfet

IRFP440A
IRFP440A

isc N-Channel MOSFET Transistor IRFP440A FEATURES ·Drain Current –I = 8.5A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.85Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplie

1.2. irfp440a.pdf Size:932K _samsung

IRFP440A
IRFP440A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

 3.1. irfp440pbf.pdf Size:1449K _upd-mosfet

IRFP440A
IRFP440A

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.85 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 63 COMPLIANT • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Lead (Pb

3.2. irfp440r irfp441r irfp442r irfp443r.pdf Size:698K _upd-mosfet

IRFP440A
IRFP440A



 3.3. irfp440r.pdf Size:236K _update-mosfet

IRFP440A
IRFP440A

isc N-Channel MOSFET Transistor IRFP440R FEATURES ·Drain Current –I = 8A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.85Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

3.4. auirfp4409.pdf Size:373K _international_rectifier

IRFP440A
IRFP440A

AUTOMOTIVE GRADE AUIRFP4409 HEXFET® Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175°C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

 3.5. irfp440.pdf Size:925K _international_rectifier

IRFP440A
IRFP440A

PD - 95198 IRFP440PbF Lead-Free 4/27/04 Document Number: 91228 www.vishay.com 1 IRFP440PbF Document Number: 91228 www.vishay.com 2 IRFP440PbF Document Number: 91228 www.vishay.com 3 IRFP440PbF Document Number: 91228 www.vishay.com 4 IRFP440PbF Document Number: 91228 www.vishay.com 5 IRFP440PbF Document Number: 91228 www.vishay.com 6 IRFP440PbF TO-247AC Package Outline

3.6. irfp440-443 irf840-843.pdf Size:192K _samsung

IRFP440A
IRFP440A



3.7. irfp440 sihfp440.pdf Size:1460K _vishay

IRFP440A
IRFP440A

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.85 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directiv

Datasheet: IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , BF245A , IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC .

 

 
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