IPL65R190E6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPL65R190E6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 151 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 98 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: THINPAK8X8

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IPL65R190E6 datasheet

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 ipl65r190e6.pdf pdf_icon

IPL65R190E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS ThinkPAK 8x8 650V CoolMOS E6 Power Transistor IPL65R190E6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPL65R190E6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle

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 ipl65r195c7.pdf pdf_icon

IPL65R190E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 650V CoolMOS C7 Power Transistor IPL65R195C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C7 Power Transistor IPL65R195C7 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

 7.1. Size:1322K  infineon
 ipl65r1k0c6s.pdf pdf_icon

IPL65R190E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPL65R1K0C6S Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C6 Power Transistor IPL65R1K0C6S ThinPAK 5x6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an

 7.2. Size:1337K  infineon
 ipl65r1k5c6s.pdf pdf_icon

IPL65R190E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPL65R1K5C6S Data Sheet Rev. 2.0 Final Power Management & Multimarket 650V CoolMOS C6 Power Transistor IPL65R1K5C6S ThinPAK 5x6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an

MOSTRAR MÁS

Otros transistores... IPL65R420E6, IPL65R340CFD, IPL65R310E6, IPL65R230C7, IPL65R210CFD, IPL65R1K5C6S, IPL65R1K0C6S, IPL65R195C7, IRF1407, IPL65R165CFD, IPL65R130C7, IPL65R099C7, IPL65R070C7, IPL60R650P6S, IPL60R360P6S, IPL60R2K1C6S, IPL60R255P6