IPL65R130C7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPL65R130C7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 102 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.3 nS
Cossⓘ - Capacitancia de salida: 26 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: THINPAK8X8
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IPL65R130C7 Datasheet (PDF)
ipl65r130c7.pdf

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ipl65r1k5c6s.pdf

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Otros transistores... IPL65R310E6 , IPL65R230C7 , IPL65R210CFD , IPL65R1K5C6S , IPL65R1K0C6S , IPL65R195C7 , IPL65R190E6 , IPL65R165CFD , STP80NF70 , IPL65R099C7 , IPL65R070C7 , IPL60R650P6S , IPL60R360P6S , IPL60R2K1C6S , IPL60R255P6 , IPL60R210P6 , IPL60R1K5C6S .
History: NCE60P09S | EMB20P03G | SIZ920DT | RAQ045P01 | YJL3415A | HM100N20T | IRLML6344
History: NCE60P09S | EMB20P03G | SIZ920DT | RAQ045P01 | YJL3415A | HM100N20T | IRLML6344



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