Справочник MOSFET. IPL65R130C7

 

IPL65R130C7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPL65R130C7
   Маркировка: 65C7130
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 102 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5.3 ns
   Cossⓘ - Выходная емкость: 26 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
   Тип корпуса: THINPAK8X8

 Аналог (замена) для IPL65R130C7

 

 

IPL65R130C7 Datasheet (PDF)

 ..1. Size:1601K  infineon
 ipl65r130c7.pdf

IPL65R130C7 IPL65R130C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R130C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R130C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.1. Size:1322K  infineon
 ipl65r1k0c6s.pdf

IPL65R130C7 IPL65R130C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K0C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K0C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

 7.2. Size:1769K  infineon
 ipl65r195c7.pdf

IPL65R130C7 IPL65R130C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R195C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R195C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.3. Size:1337K  infineon
 ipl65r1k5c6s.pdf

IPL65R130C7 IPL65R130C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K5C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K5C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

 7.4. Size:1615K  infineon
 ipl65r165cfd.pdf

IPL65R130C7 IPL65R130C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R165CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R165CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ

 7.5. Size:1600K  infineon
 ipl65r190e6.pdf

IPL65R130C7 IPL65R130C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS ThinkPAK 8x8650V CoolMOS E6 Power TransistorIPL65R190E6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPL65R190E6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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