IPL65R070C7 Todos los transistores

 

IPL65R070C7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPL65R070C7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 169 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 48 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: THINPAK8X8
 

 Búsqueda de reemplazo de IPL65R070C7 MOSFET

   - Selección ⓘ de transistores por parámetros

 

IPL65R070C7 Datasheet (PDF)

 ..1. Size:1796K  infineon
ipl65r070c7.pdf pdf_icon

IPL65R070C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R070C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R070C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.1. Size:1748K  infineon
ipl65r099c7.pdf pdf_icon

IPL65R070C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R099C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R099C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 8.1. Size:1801K  infineon
ipl65r460cfd.pdf pdf_icon

IPL65R070C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R460CFDData SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R460CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

 8.2. Size:1772K  infineon
ipl65r725cfd.pdf pdf_icon

IPL65R070C7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R725CFDData SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R725CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

Otros transistores... IPL65R210CFD , IPL65R1K5C6S , IPL65R1K0C6S , IPL65R195C7 , IPL65R190E6 , IPL65R165CFD , IPL65R130C7 , IPL65R099C7 , SKD502T , IPL60R650P6S , IPL60R360P6S , IPL60R2K1C6S , IPL60R255P6 , IPL60R210P6 , IPL60R1K5C6S , IPL60R180P6 , IPI80N06S3-07 .

History: HSH150N04 | SFP055N80C2 | WMP07N60C4 | MTB3D0N03BH8 | RCX220N25 | CRST055N08N | JSM2622

 

 
Back to Top

 


 
.