IPL65R070C7
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPL65R070C7
Marking Code: 65C7070
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 169
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 28
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 48
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package: THINPAK8X8
IPL65R070C7
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPL65R070C7
Datasheet (PDF)
..1. Size:1796K infineon
ipl65r070c7.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R070C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R070C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and
7.1. Size:1748K infineon
ipl65r099c7.pdf
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8.1. Size:1801K infineon
ipl65r460cfd.pdf
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ipl65r725cfd.pdf
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ipl65r195c7.pdf
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ipl65r130c7.pdf
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ipl65r165cfd.pdf
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ipl65r210cfd.pdf
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ipl65r310e6.pdf
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ipl65r190e6.pdf
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8.12. Size:1798K infineon
ipl65r340cfd.pdf
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ipl65r230c7.pdf
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ipl65r660e6.pdf
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8.15. Size:1363K infineon
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