IPL60R650P6S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPL60R650P6S
   Código: 60P6650
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 28 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: THINPAK5X6

Búsqueda de reemplazo de MOSFET IPL60R650P6S

IPL60R650P6S Datasheet (PDF)

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ipl60r650p6s.pdf

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ipl60r180p6.pdf

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ipl60r360p6s.pdf

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ipl60r185c7.pdf

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