IPL60R650P6S Specs and Replacement

Type Designator: IPL60R650P6S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: THINPAK5X6

IPL60R650P6S substitution

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IPL60R650P6S datasheet

 ..1. Size:1331K  infineon
ipl60r650p6s.pdf pdf_icon

IPL60R650P6S

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R650P6S Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R650P6S ThinPAK 5x6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an... See More ⇒

 8.1. Size:1597K  infineon
ipl60r199cp.pdf pdf_icon

IPL60R650P6S

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS CP Power Transistor IPL60R199CP 1 Description The CoolMOS CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely... See More ⇒

 8.2. Size:1325K  infineon
ipl60r185p7.pdf pdf_icon

IPL60R650P6S

IPL60R185P7 MOSFET ThinPAK 8x8 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS... See More ⇒

 8.3. Size:1634K  infineon
ipl60r180p6.pdf pdf_icon

IPL60R650P6S

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R180P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R180P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

Detailed specifications: IPL65R1K5C6S, IPL65R1K0C6S, IPL65R195C7, IPL65R190E6, IPL65R165CFD, IPL65R130C7, IPL65R099C7, IPL65R070C7, SI2302, IPL60R360P6S, IPL60R2K1C6S, IPL60R255P6, IPL60R210P6, IPL60R1K5C6S, IPL60R180P6, IPI80N06S3-07, IPI65R420CFD

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