IPL60R210P6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPL60R210P6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 151 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 19.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 76 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm

Encapsulados: THINPAK8X8

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IPL60R210P6 datasheet

 ..1. Size:1607K  infineon
 ipl60r210p6.pdf pdf_icon

IPL60R210P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R210P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R210P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

 7.1. Size:1618K  infineon
 ipl60r255p6.pdf pdf_icon

IPL60R210P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R255P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R255P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

 7.2. Size:1592K  infineon
 ipl60r299cp.pdf pdf_icon

IPL60R210P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS CP Power Transistor IPL60R299CP 1 Description The CoolMOS CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely

 7.3. Size:1239K  infineon
 ipl60r225cfd7.pdf pdf_icon

IPL60R210P6

IPL60R225CFD7 MOSFET ThinPAK 8x8 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s

MOSTRAR MÁS

Otros transistores... IPL65R165CFD, IPL65R130C7, IPL65R099C7, IPL65R070C7, IPL60R650P6S, IPL60R360P6S, IPL60R2K1C6S, IPL60R255P6, IRF520, IPL60R1K5C6S, IPL60R180P6, IPI80N06S3-07, IPI65R420CFD, IPI65R310CFD, IPI65R280E6, IPI65R190E6, IPI65R190CFD