All MOSFET. IPL60R210P6 Datasheet

 

IPL60R210P6 Datasheet and Replacement


   Type Designator: IPL60R210P6
   Marking Code: 6R210P6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 19.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
   Package: THINPAK8X8
 

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IPL60R210P6 Datasheet (PDF)

 ..1. Size:1607K  infineon
ipl60r210p6.pdf pdf_icon

IPL60R210P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R210P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R210P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.1. Size:1618K  infineon
ipl60r255p6.pdf pdf_icon

IPL60R210P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R255P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R255P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.2. Size:1592K  infineon
ipl60r299cp.pdf pdf_icon

IPL60R210P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CP600V CoolMOS CP Power TransistorIPL60R299CP Data SheetRev. 2.0, 2010-10-01Final Industrial & Multimarket600V CoolMOS CP Power Transistor IPL60R299CP1 DescriptionThe CoolMOS CP series offers devices which provide all benefits of a fastswitching SJ MOSFET while not sacrificing ease of use. Extremely

 7.3. Size:1239K  infineon
ipl60r225cfd7.pdf pdf_icon

IPL60R210P6

IPL60R225CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

Datasheet: IPL65R165CFD , IPL65R130C7 , IPL65R099C7 , IPL65R070C7 , IPL60R650P6S , IPL60R360P6S , IPL60R2K1C6S , IPL60R255P6 , CS150N03A8 , IPL60R1K5C6S , IPL60R180P6 , IPI80N06S3-07 , IPI65R420CFD , IPI65R310CFD , IPI65R280E6 , IPI65R190E6 , IPI65R190CFD .

Keywords - IPL60R210P6 MOSFET datasheet

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