IPI65R190C6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI65R190C6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 151 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 98 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO-262
Búsqueda de reemplazo de IPI65R190C6 MOSFET
IPI65R190C6 datasheet
ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
ipi65r190c6.pdf
isc N-Channel MOSFET Transistor IPI65R190C6 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RAT
ipa65r190cfd ipb65r190cfd ipi65r190cfd ipp65r190cfd ipw65r190cfd.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6/CFD 650V 650V CoolMOS C6 CFD Power Transistor IPx65R190CFD Data Sheet Data Sheet Rev. 2.2 Final Industrial & Multimarket IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD 650V CoolMOS C6 CFD Power Transistor TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology fo
ipi65r190cfd.pdf
isc N-Channel MOSFET Transistor IPI65R190CFD FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode
Otros transistores... IPL60R1K5C6S , IPL60R180P6 , IPI80N06S3-07 , IPI65R420CFD , IPI65R310CFD , IPI65R280E6 , IPI65R190E6 , IPI65R190CFD , IRFB31N20D , IPI65R150CFD , IPI65R110CFD , IPI65R099C6 , IPI14N03LA , IPI12CN10NG , IPI100N06S3L-04 , IPI09N03LA , IPI084N06L3G .
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