All MOSFET. IPI65R190C6 Datasheet

 

IPI65R190C6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPI65R190C6
   Marking Code: 65C6190
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 151 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
   Maximum Drain Current |Id|: 20.2 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 12 nS
   Drain-Source Capacitance (Cd): 98 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
   Package: TO-262

 IPI65R190C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI65R190C6 Datasheet (PDF)

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ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf

IPI65R190C6 IPI65R190C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R190C6 Data SheetRev. 2.0, 2011-05-09Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6IPI65R190C6, IPP65R190C6IPW65R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 ..2. Size:286K  inchange semiconductor
ipi65r190c6.pdf

IPI65R190C6 IPI65R190C6

isc N-Channel MOSFET Transistor IPI65R190C6FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOLUTE MAXIMUM RAT

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ipa65r190cfd ipb65r190cfd ipi65r190cfd ipp65r190cfd ipw65r190cfd.pdf

IPI65R190C6 IPI65R190C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6/CFD 650V650V CoolMOS C6 CFD Power TransistorIPx65R190CFD Data Sheet Data SheetRev. 2.2FinalIndustrial & MultimarketIPW65R190CFD , IPB65R190CFD , IPP65R190CFDIPA65R190CFD , IPI65R190CFD650V CoolMOS C6 CFD Power TransistorTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology fo

 4.2. Size:287K  inchange semiconductor
ipi65r190cfd.pdf

IPI65R190C6 IPI65R190C6

isc N-Channel MOSFET Transistor IPI65R190CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and robust body diode

 5.1. Size:2211K  infineon
ipa65r190e6 ipb65r190e6 ipi65r190e6 ipp65r190e6 ipw65r190e6.pdf

IPI65R190C6 IPI65R190C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6650V CoolMOS E6 Power TransistorIPx65R190E6 Data SheetRev. 2.0, 2011-05-13Final Industrial & Multimarket650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6IPI65R190E6, IPP65R190E6IPW65R190E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 5.2. Size:286K  inchange semiconductor
ipi65r190e6.pdf

IPI65R190C6 IPI65R190C6

isc N-Channel MOSFET Transistor IPI65R190E6FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOLUTE MAXIMUM RAT

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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