IPI65R150CFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI65R150CFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 195.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 22.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 7.6 nS
Cossⓘ - Capacitancia de salida: 110 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Encapsulados: TO-262
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IPI65R150CFD datasheet
..1. Size:3773K infineon
ipa65r150cfd ipb65r150cfd ipi65r150cfd ipp65r150cfd ipw65r150cfd.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R150CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R150CFD , IPB65R150CFD , IPP65R150CFD IPA65R150CFD , IPI65R150CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
..2. Size:3818K infineon
ipw65r150cfd ipb65r150cfd ipp65r150cfd ipa65r150cfd ipi65r150cfd.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R150CFD Data Sheet Rev. 2.0 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R150CFD , IPB65R150CFD , IPP65R150CFD IPA65R150CFD , IPI65R150CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
..3. Size:3820K infineon
ipw65r190cfd ipb65r150cfd ipp65r150cfd ipa65r150cfd ipi65r150cfd.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R190CFD Data Sheet Rev. 2.7 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage
..4. Size:286K inchange semiconductor
ipi65r150cfd.pdf 
isc N-Channel MOSFET Transistor IPI65R150CFD FEATURES Static drain-source on-resistance RDS(on) 0.15 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode
7.1. Size:2212K infineon
ipa65r190c6 ipb65r190c6 ipi65r190c6 ipp65r190c6 ipw65r190c6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6 IPI65R190C6, IPP65R190C6 IPW65R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
7.2. Size:3853K infineon
ipw65r110cfd ipb65r110cfd ipp65r110cfd ipa65r110cfd ipi65r110cfd.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R110CFD Data Sheet Rev. 2.6 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage pow
7.3. Size:3828K infineon
ipa65r110cfd ipb65r110cfd ipi65r110cfd ipp65r110cfd ipw65r110cfd.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD2 650V 650V CoolMOS CFD2 Power Transistor IPx65R110CFD Data Sheet Rev. 2.6 Final Industrial & Multimarket 650V CoolMOS CFD2 Power Transistor IPW65R110CFD, IPB65R110CFD, IPP65R110CFD IPA65R110CFD, IPI65R110CFD TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology for high voltage pow
7.4. Size:6482K infineon
ipa65r190cfd ipb65r190cfd ipi65r190cfd ipp65r190cfd ipw65r190cfd.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6/CFD 650V 650V CoolMOS C6 CFD Power Transistor IPx65R190CFD Data Sheet Data Sheet Rev. 2.2 Final Industrial & Multimarket IPW65R190CFD , IPB65R190CFD , IPP65R190CFD IPA65R190CFD , IPI65R190CFD 650V CoolMOS C6 CFD Power Transistor TO-247 D PAK TO-220 1 Description CoolMOS is a revolutionary technology fo
7.5. Size:2211K infineon
ipa65r190e6 ipb65r190e6 ipi65r190e6 ipp65r190e6 ipw65r190e6.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket 650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi
7.6. Size:287K inchange semiconductor
ipi65r190cfd.pdf 
isc N-Channel MOSFET Transistor IPI65R190CFD FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode
7.7. Size:271K inchange semiconductor
ipi65r110cfd.pdf 
isc N-Channel MOSFET Transistor IPI65R110CFD FEATURES Static drain-source on-resistance RDS(on) 0.11 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode
7.8. Size:286K inchange semiconductor
ipi65r190c6.pdf 
isc N-Channel MOSFET Transistor IPI65R190C6 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RAT
7.9. Size:286K inchange semiconductor
ipi65r190e6.pdf 
isc N-Channel MOSFET Transistor IPI65R190E6 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RAT
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