IPI65R150CFD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPI65R150CFD
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 195.3 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 22.4 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 7.6 ns
Выходная емкость (Cd): 110 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.15 Ohm
Тип корпуса: TO-262
Аналог (замена) для IPI65R150CFD
IPI65R150CFD Datasheet (PDF)
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R150CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R150CFD , IPB65R150CFD , IPP65R150CFDIPA65R150CFD , IPI65R150CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R150CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R150CFD , IPB65R150CFD , IPP65R150CFDIPA65R150CFD , IPI65R150CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R190CFD Data SheetRev. 2.7FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R190CFD , IPB65R190CFD , IPP65R190CFDIPA65R190CFD , IPI65R190CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage
ipi65r150cfd.pdf
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isc N-Channel MOSFET Transistor IPI65R150CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.15Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and robust body diode
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R190C6 Data SheetRev. 2.0, 2011-05-09Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPA65R190C6, IPB65R190C6IPI65R190C6, IPP65R190C6IPW65R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6/CFD 650V650V CoolMOS C6 CFD Power TransistorIPx65R190CFD Data Sheet Data SheetRev. 2.2FinalIndustrial & MultimarketIPW65R190CFD , IPB65R190CFD , IPP65R190CFDIPA65R190CFD , IPI65R190CFD650V CoolMOS C6 CFD Power TransistorTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology fo
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6650V CoolMOS E6 Power TransistorIPx65R190E6 Data SheetRev. 2.0, 2011-05-13Final Industrial & Multimarket650V CoolMOS E6 Power Transistor IPA65R190E6, IPB65R190E6IPI65R190E6, IPP65R190E6IPW65R190E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
ipi65r190cfd.pdf
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isc N-Channel MOSFET Transistor IPI65R190CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and robust body diode
ipi65r110cfd.pdf
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isc N-Channel MOSFET Transistor IPI65R110CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.11Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and robust body diode
ipi65r190c6.pdf
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isc N-Channel MOSFET Transistor IPI65R190C6FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOLUTE MAXIMUM RAT
ipi65r190e6.pdf
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isc N-Channel MOSFET Transistor IPI65R190E6FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOLUTE MAXIMUM RAT
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AOW20C60 | STP11N65M2